The Buffer layer will not show the intrinsic electronic structure of graphene but induces substantial n-doping within the overlying monolayer graphene movie.[17] Graphene growth by thermal decomposition of silicon carbide (SiC) is a method that makes wafer-scale, one-orientation graphene on an insulating substrate. It is commonly referred to as epigraphene, https://x.com/hongyuxin20/status/1816463411615502739